| PART |
Description |
Maker |
| 2SK2006-4072 |
5 A, 900 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET
|
|
| IXCY01N90E |
900 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA PLASTIC PACKAGE-3
|
IXYS, Corp.
|
| STY16NA90 |
N-CHANNEL 900 V - 0.5 OHM - 16 A - EXTREMELY LOW GATE CHARGE POWER MOSFET
|
ST Microelectronics
|
| STP12IE90F4 P12IE90F4 |
Emitter Switched Bipolar Transistor ESBT 900 V - 12A - 0.083 ohm
|
STMICROELECTRONICS[STMicroelectronics]
|
| 2SK261009 2SK2610 |
5 A, 900 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET
Chopper Regulator, DC−DC Converter and Motor Drive Applications
|
Toshiba Semiconductor
|
| TMP93CU76 |
16-Bit Microcontroller TLCS-900 Family: 900/L Series
|
Toshiba
|
| TMP93PW20A |
16-Bit Microcontroller TLCS-900 Family: 900/L Series
|
Toshiba
|
| 2SK1419-YA 2SK1425-YD 2SK1461-YA |
15 A, 60 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220
60 A, 60 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3P
5 A, 900 V, 3.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218
|
|
| 2SK1984-01MR |
N-channel MOS-FET 3 A, 900 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Fuji Electric Holdings Co., Ltd.
FUJI[Fuji Electric]
|
| 2SK2664 |
3 A, 900 V, 4.7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Power MOSFETs / HVX-II Series (Three Terminal Type)
|
Shindengen
|
| APT64GA90LD30 |
Insulated Gate Bipolar Transistor - Power MOS 8; Package: TO-264; BV(CES) (V): 900; VCE(sat) (V): 3.1; IC (A): 64; 117 A, 900 V, N-CHANNEL IGBT, TO-264AA
|
Microsemi, Corp.
|
| STD2NK90Z06 STD2NK90Z-1 STD2NK90ZT4 STP2NK90Z |
N-channel 900V - 5Ω - 2.1A - TO-220 /DPAK/IPAK Zener-Protected SuperMESH MOSFET
2.1 A, 900 V, 6.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
|
STMicroelectronics
|
|
